Synthesis of CuInS2 thin film by chemical bath deposition and characterization

Volume 6 Issue 1 April - June 2018

Research Paper

Synthesis of CuInS2 thin film by chemical bath deposition and characterization

Sumita Sengupta*, M. A Pateria**

* Senior Assistant Professor, Department of Applied Physics, CSIT, Durg Accrediated by NAAC, Chhattisgarh, India.

** Professor, Department of Applied Physics, Shri Shankaracharya Group of Institutions, Chhattisgarh, India.

Sengupta, S., and Pateria, M.A. (2018). Synthesis of CuInS2 thin film by chemical bath deposition and characterization. i-manager’s Journal on Material Science, 6(1), 1-7. https://doi.org/10.26634/jms.6.1.14384

Abstract

A very simple and economic chemical bath deposition method has been used here for the synthesis of CuInS2 (CIS) thin  films on glass substrate at 45o C. The purpose of the present work is to synthesize a thin film of CuInS2  which must have high absorption coefficient in the visible range, high value of photoconductive gain which increases the mobility and life time of charge carriers and can be used as a hetero-junction in solar cells or photovoltaic devices. The synthesized sample is characterized with X-ray Diffractometer (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-rays (EDX) and Ultraviolet Visible Spectrophotometer (UV-VIS). The synthesized film is having chalcopyrite structure. Lattice constants, a=5.517 Å and c=11.11 Å, have been obtained which matched well to the reported values. Synthesized particles are spherical in shape and agglomeration of particles can be viewed clearly in SEM images. The chemical composition of the synthesized film of CIS has been analyzed by using Energy Dispersive X-Ray Analysis (EDAX). The transmittance of the deposited film is high between 600-650 nm (visible region). The value of absorption coefficient is found to be in the order 5 -1 of 10 cm in the visible region. Photoluminescence spectrum (PL) is recorded by exciting the sample at 450 nm between 300-900 nm. A strong emission peak is obtained in 620 nm (Red band emission) in the IR region. The dark current varies linearly with voltage. The photoconductive gain obtained for the synthesized sample is ~104 .