Thursday, 26 September 2019

Optical and Charge Transport Characterization of Thermally Evaporated 3,5-Bis(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole Thin Films for ETL Applications in Optoelectronic Devices

Volume 6 Issue 2 July - September 2018

Research Paper

Optical and Charge Transport Characterization of Thermally Evaporated 3,5-Bis(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole Thin Films for ETL Applications in Optoelectronic Devices

Gurpreet Singh*, Ramanpreet Kaur Aulakh**, Sameer Kalia***, Neerja Sharma****
* Assistant Professor, Department of Physics, Guru Nanak Dev University College, Narot Jaimal Singh, Pathankot, Punjab, India.
** Assistant Professor, Department of Physics, Guru Nanak Dev University College, Patti, Tarn Taran, Punjab, India.
*** Associate Professor, Department of Physics, DAV College, Amritsar, Punjab, India.
**** Assistant Professor, Department of Physics, DAV College, Amritsar, Punjab, India.
Singh, G., Aulakh, R. K.,Kalia, S. and Sharma, N.(2018). Optical and Charge Transport Characterization of Thermally Evaporated 3,5-Bis(4-Tert-Butylphenyl)-4-Phenyl-4h-1,2,4-Triazole Thin Films for ETL Applications in Optoelectronic Devices. i-manager’s Journal on Material Science, 6(2), 22-29. https://doi.org/10.26634/jms.6.2.14413

Abstract

This paper presents the surface morphological, optical and charge transport characterization of thermally evaporated thin film of organic material, namely 3, 5-Bis (4-tert-butylphenyl)-4-phenyl-4H-1, 2, 4-triazole (abbreviated as BBPT) prepared by well-known thermal evaporation technique, to be applied as an electron transport material in optoelectronic devices. Carrier mobility and AC conductivity are estimated from frequency dependent admittance -5 characterization performed over a single layer device having structure ITO/ BBPT /Al and are found in the range 5.17 x 10-5 cm2 V-1s-1 and 4.83575 × 10-6 ohm-1 m-1, respectively. Various electrical parameters are calculated from charge transport
characterization of ITO/ BBPT /Al device. Results of this work demonstrated that the conduction mechanism is in good correlation with the theory of hopping conduction in amorphous materials and the material studied have a potential application as an Electron Transport Layer (ETL) material in optoelectronic devices.

No comments:

Post a Comment